|
|
|
Parameter
|
Test Condition
|
|
TCR
|
-55° C to +125° C
|
+150 ppm/°C (Standard value)
|
MAX
|
|
TCR
|
-55° C to +125° C
|
+100 ppm/°C
|
MAX
|
|
TCR
|
-55° C to +125° C
|
+50 ppm/°C
|
MAX
|
|
TCR
|
-55° C to +125° C
|
+10 ppm/°C (Special Request, NiCR only)
|
MAX
|
|
Operating Voltage
|
-55° C to 125° C
|
00 Vdc
|
MAX
|
|
Power Rating (R Total)
|
@ 70° C (derate linearly to zero @ 150° C)
|
250 mW
|
MAX
|
|
Single Series
|
@ 70° C (derate linearly to zero @ 150° C)
|
250 mW
|
MAX
|
|
Center-Tap
|
@ 70° C (derate linearly to zero @ 150° C)
|
250 mW
|
MAX
|
|
Multi-Tap
|
@ 70° C (derate linearly to zero @ 150° C)
|
250 mW
|
MAX
|
|
Thermal Shock
|
Method 107 MIL-STD-202 F
|
+0.5%@DR
|
MAX
|
|
High Temperature Exposure
|
100 Hrs @ 150° C Ambient
|
+0.25%@DR
|
MAX
|
|
Moisture Resistance
|
Method 106 MIL-STD-202 F
|
+0.5%@DR
|
MAX
|
|
Life
|
Method 108 MIL-STD-202 F (125∞C/1000 hr)
|
+0.5%@DR
|
MAX
|
|
Noise
|
Method 308 MIL-STD-202 F
|
-20 dB
|
MAX
|
|
Insulation Resistance
|
@25° C
|
1 X 1012 Ohms
|
MIN
|
|
Mechanical Specification for Silicon Body Only (all others to customer requirements)
|
|
|
Substrate
|
Silicon 10 + 2 mils thick
|
|
|
Isolation Layer
|
Si02 10,000Å thick, min
|
|
|
Backing
|
Lapped surface only (no metal)
|
|
|
Solderable
|
Gold Plated Backside (optional)
|
|
|
Metallization
|
Gold 10,000Å thick, min, Front Contacts
|
|
|
Gold Bonding Pads
|
Front Contact (> .0035” Sq.)
|
|
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