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Medium and High Power PIN Diode SPST Switch Elements

2013-02-20 09:57:44  嘉兆科技(深圳)有限公司  发布

详细信息


Medium and High Power PIN Diode SPST Switch Elements

Part
Number

Rated
Power
Max

Frequency
Maximum

Insertion Loss
Typical

Isolation
Typical

Package*

1 GHz

2.5 GHz

1 GHz

2.5 GHz

MSWSE-050-10

50

1

0.15

10

0805P (SE)

MSWSE-044-10

40

2

0.20

0.25

15

8

0805P (SE)

MSWSHB-020-30

40

10

0.30

55

2012 (SH)

MSWSSB-020-30

20

10

0.20

0.20

70

55

2012 (SS)

MSWSS-020-40

20

6

0.15

0.30

63

50

2012 (SS)

MEST2G-150-20

80

10

0.20

0.25

26

19

CM26 (SE)

MEST2G-080-25

80

10

0.20

0.25

30

24

CM27 (SE)

MEST2G-020-15

20

6

0.20

0.20

25

18

2012 (SE)

MEST2G-010-20

10

10

0.40

0.40

31

23

2012 (SE)

MEST2GFC-10-25

10

40

0.20

0.20

30

26

Chip (SE)

MSWSE-010-15

10

2

0.25

0.25

18

9

0503 (SE)

MSWSE-005-15

5

6

0.30

0.60

24

17

0503 (SE)

*Configurations: series (SE), shunt (SH), and series shunt (SS)


High Dynamic Range Shunt Attenuator Diodes

Part Number

Polarity

Insertion
Loss dB
Typical

Attenuation Value, dB typical

Package

10 µA

100 µA

1 mA

10 mA

100 mA

MSAT-P25

PIN

0.3

0.4

0.8

5

17

27

2012

MSAT-N25

NIP

0.3

0.4

0.8

5

17

27

2012

• Low distortion vs. forward current, harmonic distortion at 85 dBc typical
• Broadband performance beyond 10 GHz

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