Silicon Limiter Diodes-益择网-专业的仪器网上选购商城

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The Aeroflex / Metelics MLP-7100 Series Limiter diodes are specially processed PIN diodes with a thin intrinsic region designed for use in passive or active limiters over the entire range of frequencies from 100 MHz to beyond 20 GHz. The different “I” region thicknesses and capacitances provide variable threshold and leakage power levels and power handling capability.

Low Loss
Greater Bandwidth
Fast Turn on Time

MLP7130 – MLP7122 (DC Parameters)
Model	VB	CJ	CJ	Rs	Rs	Tl	Pulsed Thermal Resistance	Thermal Resistance	Package
Model	TYP V	TYP pF	MAX pF	TYP ?	TYP ?	TYP nS	TYP C/W	MAX °C/W	Package
MLP7130	15-30	0.12	0.1	2	4	5	30	120	CS11 (C11), CS20 (H20), CS37 (T86), SOD323, CS19
MLP7131	15-30	0.2	0.15	1.5	3	5	20	80
MLP7100	20-45	0.2	0.15	1.5	5	5	20	100
MLP7101	20-45	0.5	0.3	1.2	4.5	10	12	80
MLP7102	20-45	0.7	0.5	1	4	10	10	55
MLP7140	30-60	0.12	0.1	2	4	7	20	100
MLP7141	30-60	0.2	0.15	1.5	4	7	15	70
MLP7110	45-75	0.2	0.15	1.5	4	10	15	80
MLP7111	45-75	0.5	0.3	1.2	3.5	15	10	60
MLP7112	45-75	0.7	0.5	1	3	20	6	40
MLP7120	120-180	0.2	0.15	1.5	3.5	50	1.2	40
MLP7121	120-180	0.6	0.3	1	3	50	0.5	20
MLP7122	120-180	0.8	0.5	0.5	3	100	0.3	15
Test Conditions	@ 10 mA	@ 0 V, 1 MHz	@ -6 V, 1 MHz	@ 10 mA, 1 GHz	@ 1 mA, 1 GHz	IF = 10 MA IR = 6 MA	1 µsec pulse

MLP7130 – MLP7122 (RF Characteristics)
Model Continued	Peak Power In	Threshold	Leakage Pout	Insertion Loss	CW Power In	Recovery Time
Model Continued	MAX dBm	TYP dB	TYP dBm	TYP dB	MAX W	TYPnS
MLP7130	47	7	19	0.1	2	5
MLP7131	50	7	22	0.1	3	5
MLP7100	50	10	22	0.1	2	10
MLP7101	53	10	24	0.2	3	10
MLP7102	56	10	25	0.2	4	10
MLP7140	47	12	24	0.1	3	10
MLP7141	50	12	27	0.1	4	10
MLP7110	53	15	27	0.1	3	20
MLP7111	56	15	29	0.2	4	20
MLP7112	59	15	31	0.2	5	20
MLP7120	60	20	39	0.1	5	50
MLP7121	63	20	41	0.2	10	50
MLP7122	66	20	44	0.2	15	50
Test Conditions	1	2	2	3	4	5
Pulsed thermal impedance is given for 1 m pulse. CW thermal impedance presumes infinite heat sink. Threshold input power produces 1 dB increase in insertion loss. 1 GHz Chip loss can be respresented as a resistance in shunt with the junction capacitance. 3 GHz, zero Bias. Loss data shown for 10 GHz for 0.15 and 0.30 pF chips, 5 CHz for 0.50 pF chips. Measured at-10 dBm input. Note that CW power and average power are not synonymous. Power ratings are computed in terms of a peak junction temperature of 200° C, for short pulses, an average junction temperature of 125° C, and an ambient of 25° C. Duty factor 0.001 assumed for maximum pulse power input. Recovery time is measured with ground return (less than 1.0 Ohms) to 1 dB excess loss, at 1 GHz.

Maximum Ratings
Parameters	Rating
Operating Temperature	-55° C to + 150° C
Maximum Leakage Current	0.5 mA at 88% of minimum rated breakdown

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