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Silicon Schottky N-Type Diodes: Extra High Barrier

2013-02-20 09:57:01  嘉兆科技(深圳)有限公司  发布

详细信息

The Aeroflex / Metelics MSS60,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum
mixer and detector performance is obtained with LO power of +6 dBm to +12 dBm per diode. These can also be used in doubler, limiter, detector and sampler applications.

 

  • VF, RD and CJ matching options.
  • Chip, beam lead or packaged devices.
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available.
  •   Spice Model

 

 

VF @ 1 mA = 550 ~ 700 mV, VBR @ 10 mA = 3.5 V min.

Chip and Beam Lead

Model

Configuration

CJ

RD

RS

FCO

Package

TYP

pF

MAX

pF

MAX 
?

TYP
?

TYP GHz

MSS60,046-C26

Single Junction

0.10

0.12

18

10

190

C26

MSS60,048-C26

Single Junction

0.12

0.15

16

8

190

C26

MSS60,144-B10B

Single Junction

0.08

0.10

25

15

153

B10B

MSS60,148-B10B

Single Junction

0.12

0.15

18

10

133

B10B

MSS60,153-B10B

Single Junction

0.20

0.25

12

5

159

B10B

MSS60,244-B20

Series Tee

0.08

0.10

25

15

133

B20

MSS60,248-B20

Series Tee

0.12

0.15

18

7

133

B20

MSS60,253-B20

Series Tee

0.20

0.25

12

5

159

B20

MSS60,444-B42

Ring Quad

0.08

0.10

25

15

133

B42

MSS60,448-B42

Ring Quad

0.12

0.15

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