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Silicon Schottky N-Type Diodes: High Barrier

2013-02-20 09:57:01  嘉兆科技(深圳)有限公司  发布

详细信息

The Aeroflex / Metelics MSS50,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum
mixer and detector performance is obtained with LO power of +2 dBm to +8 dBm per diode. These can also be used in doubler, limiter, detector and sampler applications.

 

  • VF, RD and CJ matching options.
  • Chip, beam lead or packaged devices.
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available.
  •   Spice Model

 

 

VF @ 1 mA = 450 ~ 550 mV, VBR @ 10 mA = 4 V min.

Chip and Beam Lead

Model

Configuration

CJ

RD

RS

FCO

Package

TYP

pF

MAX

pF

MAX

TYP

TYP

GHz

MSS50,046-C26

Single Junction

0.10

0.12

20

10

190

C26

MSS50,048-C15

Single Junction

0.12

0.15

15

7

190

C15

MSS50,062-C16

Single Junction

0.50

0.55

12

2

160

C16

MSS50,146-B10B

Single Junction

0.07

0.12

18

9

253

B10B

MSS50,155-B10B

Single Junction

0.25

0.30

15

7

90

B10B

MSS50,244-B20

Series Tee

0.15

0.20

16

7

183

B20

MSS50,341-B21

Anti-Parallel Pair

0.20

0.26

16

7

114

B21

MSS50,448-B40

Ring Quad

0.20

0.25

14

6

133

B40

MSS50,B46-B45

Bridge Quad

0.10

0.13

20

10

159

B45

MSS50,B53-B45

Bridge Quad

0.20

0.25

15

5

159

B45

MSS50,CR46-B49

Crossover Ring Quad

0.09

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