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Silicon Schottky N-Type Diodes: Medium Barrier

2013-02-20 09:57:01  嘉兆科技(深圳)有限公司  发布

详细信息

The Aeroflex / Metelics MSS40,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of 0 dBm to +6 dBm per diode. These can also be used in doubler, limiter, detector and sampler applications.

 

  • VF, RD and CJ matching options.
  • Chip, beam lead or packaged devices.
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available.
  •   Spice Model

 

VF @ 1 mA = 350 ~ 450 mV, VBR @ 10 mA = 3 V min.

Chip and Beam Lead

Model

Configuration

CJ

RD

RS

FCO

Package

TYP

pF

MAX

pF

MAX ?

TYP

TYP GHz

MSS40,045-C15

Single Junction

0.09

0.12

15

7

253

C15

MSS40,048-C15

Single Junction

0.12

0.15

15

7

190

C15

MSS40,141-B10B

Single Junction

0.06

0.10

22

10

265

B10B

MSS40,148-B10B

Single Junction

0.12

0.15

17

7

190

B10B

MSS40,155-B10B

Single Junction

0.25

0.30

13

5

127

B10B

MSS40,244-B20

Series Tee

0.08

0.12

22

19

105

B20

MSS40,248-B20

Series Tee

0.12

0.15

17

10

133

B20

MSS40,255-B20

Series Tee

0.25

0.30

15

5

127

B20

MSS40,448-B42

Ring Quad

0.12

0.15

17

7

190

B42

MSS40,455-B40

Ring Quad

0.25

0.30

17

5

127

B40

MSS40,B46-B45

Bridge Quad

0.10

0.13

25

15

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