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Silicon Schottky N-Type Diodes: Low Barrier

2013-02-20 09:57:01  嘉兆科技(深圳)有限公司  发布

详细信息

 

The Aeroflex / Metelics MSS30,000 Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of -3 dBm to +3 dBm per diode. These can also be used in doubler, limiter, detector and sampler applications.

 

  • VF, RD and CJ matching options.
  • Chip, beam lead or packaged devices.
  • Hi-Rel screening per MIL-PRF-19500 and MIL-PRF-38534 available.
  •   Spice Model

 

VF @ 1 mA = 230 ~ 350 mV, VBR @ 10 mA = 2 V min.

Chip and Beam Lead

Model

Configuration

CJ

RD

RS

FCO

Package

TYP

pF

MAX

pF

MAX
?

TYP
?

TYP

GHz

MSS30,046-C15

Single Junction

0.10

0.12

18

10

160

C15

MSS30,050-C15

Single Junction

0.15

0.18

15

6

175

C15

MSS30,142-B10B

Single Junction

0.07

0.10

22

13

175

B10B

MSS30,148-B10B

Single Junction

0.12

0.15

15

7

190

B10B

MSS30,154-B10B

Single Junction

0.22

0.25

12

3

240

B10B

MSS30,242-B20

Series Tee

0.07

0.10

22

13

175

B20

MSS30,248-B20

Series Tee

0.12

0.15

15

7

190

B20

MSS30,254-B20

Series Tee

0.22

0.25

12

3

240

B20

MSS30,346-B21

Anti-Parallel Pair

0.27

0.30

16

11

55

B21

MSS30,442-B42

Ring Quad

0.07

0.10

22

13

175

B42

MSS30,448-B42

Ring Quad

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