Silicon Schottky P-Type Diodes: Medium Barrier-益择网-专业的仪器网上选购商城

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The Aeroflex / Metelics MSS39,000 series of Schottky diodes is fabricated on P-Type epitaxial substrates for superior 1/f noise performance in microwave based-detector applications up to 40 GHz.

Very low 1/f Noise.
Detector applications to 40 GHz.
Chip, beam lead or packaged devices.
Spice Model

VF @ 1 mA = 380 ~ 480 mV (Chip and Beam Lead)
Model	VBR	CJ		γ	TSS	Frequency	Package
Model	MIN V	TYP pF	MAX pF	TYP mV / mW	TYP dBm	TYP GHz	Package
MSS39,045-C15	5	0.08	0.1	5,000	-58	18	C15p
MSS39,048-C15	5	0.12	0.15	5,000	-58	12	C15p
MSS39,144-B10B	3.5	0.06	0.08	5,000	-58	40	B10Bp
MSS39,146-B10B	3.5	0.08	0.1	5,000	-58	26	B10Bp
MSS39,148-B10B	3.5	0.1	0.12	5,000	-58	20	B10Bp
MSS39,152-B10B	3.5	0.15	0.18	5,000	-58	18	B10Bp
Test Conditions	IR = 10 A	VR = 0 V F = 1 MHz		F = 10 GHz, DC BIAS = 20 A Video BW = 2 MHz RL = 100 k?

VF @ 1 mA = 380 ~ 480 mV (Packaged)
Model	CT		γ	TSS	Cp	Lp	Package
Model	TYP pF	MAX pF	TYP mV / mW	TYP dBm	TYP pF	TYP nH	Package
MSS39,045-P55	0.21	0.26	5,000	-58	0.13	0.35	P55p
MSS39,045-P86	0.23	0.23	5,000	-58	0.15	1	P86p
MSS39,048-P55	0.25	0.31	5,000	-58	0.13	0.35	P55p
MSS39,048-P86	0.27	0.33	5,000	-58	0.15	1	P86p
MSS39,144-H27	0.18	0.24	5,000	-58	0.12	0.4	H27
MSS39,144-0402	0.11	0.16	5,000	-58	0.05	0.25	402
MSS39,144-0805-2	0.12	0.17	5,000	-58	0.06	0.4	0805-2
MSS39,146-H27	0.2	0.25	5,000	-58	0.12	0.4	H27
MSS39,146-0402	0.13	0.18	5,000	-58	0.05	0.25	402
MSS39,146-0805-2	0.14	0.2	5,000	-58	0.06	0.4	0805-2
MSS39,148-E25	0.17	0.22	5,000	-58	0.07	0.4	E25
MSS39,148-H20	0.28	0.33	5,000	-58	0.18	0.5	H20
MSS39,148-0402	0.15	0.2	5,000	-58	0.05	0.25	402
MSS39,148-0805-2	0.16	0.22	5,000	-58	0.06	0.4	0805-2
MSS39,152-E25	0.22	0.28	5,000	-58	0.07	0.4	E25
MSS39,152-H20	0.33	0.39	5,000	-58	0.18	0.5	H20
MSS39,152-0402	0.2	0.25	5,000	-58	0.05	0.25	402
MSS39,152-0805-2	0.21	0.27	5,000	-58	0.06	0.4	0805-2
Test Conditions	VR = 0 V F = 1 MHz		F = 10 GHz, DC BIAS = 20 A Video BW = 2 MHz, RL = 100 k?

Maximum Ratings
Parameters	Rating
Reverse Voltage	Rated V_BR
Forward Current	50 mA
Operation Temperature	-65° C to +150° C
Storage Temperature	-65° C to +150° C
Power Dissipation	150 mW, derated linearly to zero at Ta= +150° C
Soldering Temperature (Packaged)	+230° C for 5 sec.
Beam Lead Pull Strength, Min	4 grams

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Silicon Schottky P-Type Diodes: Medium Barrier

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