Silicon Schottky P-Type Diodes: Low Barrier-益择网-专业的仪器网上选购商城

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The Aeroflex / Metelics Schottky diodes are optimized for superior 1/f noise on P-type silicon epitaxial substrate with proprietary process. In general they require a small forward bias (5 ~ 50 μA) for small power levels below -20 dBm when used as microwave detectors.

Superior 1/f noise.
Better temperature stability than zero bias Schottky diode.
Low barrier height.
Passivated with silicon nitride.
Spice Model

VF @ 1 mA = 220 ~ 330 mV, Vbr@ 10 mA = 3 V min. (Chip and Beam Lead)
Model	V_F		C_J		Rd	F opt	Package
Model	TYP	MAX	TYP	MAX	MAX	MAX	Package
MSS25,047-C15c	260	300	0.08	0.1	65	18	C15c
MSS25,049-C15c	220	260	0.1	0.12	52	12	C15c
MSS25,141-B10D	280	330	0.06	0.08	65	40	B10D
MSS25,143-B10D	260	300	0.08	0.1	60	26	B10D
MSS25,145-B10D	220	260	0.1	0.12	52	18	B10D
Test Conditions	I_F= 1 mA		V_R = 0.2 V F = 1 MHz		I_f= 5 mA	GHz

Maximum Ratings
Parameters	Rating
Operation Temperature	-65° C to 150° C
Storage Temperature	-65° C to 150° C
Power Dissipation	150 mW per junction at 25° derate linearly to zero at Ta= +150° C
Soldering Temperature	230° C for 5 sec.

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Silicon Schottky P-Type Diodes: Low Barrier

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