Silicon Schottky P-Type Diodes: Zero Bias-益择网-专业的仪器网上选购商城

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The Aeroflex / Metelics diodes are fabricated on P-Type substrates for low 1/f noise and are optimized for zero-bias operation. Zero-biased devices are processed to yield two distinct video impedance classes, one 1,500 Ohms typical and the other 4,000 Ohms typical. Applications requiring maximum stability and sensitivity will favor the higher video impedance. Biased detector operation offers the designer improved temperature stability and video impedance flexibility via bias current selection.

Very low 1/f Noise
Detector applications to 40 GHz
Chip, beam lead or packaged devices
Spice Model

V_BR @ 100 mA = 0.8 V min. (Chip and Beam Lead)
Model	CJ		γ	RV		TSS	Frequency	Package
Model	TYP pF	MAX pF	TYP mV / mW	TYP ?	MAX ?	TYP dBm	TYP GHz	Package
MSS20,046-C15	0.08	0.1	5,000	1,500	2,000	-58	18	C15p
MSS20,047-C15	0.08	0.1	8,000	4,000	6,000	-59	18	C15p
MSS20,050-C15	0.12	0.15	5,000	1,500	2,000	-58	12	C15p
MSS20,051-C15	0.12	0.15	8,000	4,000	6,000	-59	12	C15p
MSS20,054-C15	0.18	0.2	5,000	1,500	2,000	-58	8	C15p
MSS20,055-C15	0.18	0.2	8,000	4,000	6,000	-59	8	C15p
MSS20,140-B10D	0.06	0.08	5,000	1,500	2,000	-58	40	B10D
MSS20,141-B10D	0.06	0.08	8,000	4,000	6,000	-59	40	B10D
MSS20,142-B10D	0.08	0.1	5,000	1,500	2,000	-58	26	B10D
MSS20,143-B10D	0.08	0.1	8,000	4,000	6,000	-59	26	B10D
MSS20,145-B10D	0.1	0.12	5,000	1,500	2,000	-58	18	B10D
MSS20,146-B10D	0.1	0.12	8,000	4,000	6,000	-59	18	B10D
Test Conditions	VR = 0.5 V F = 1 MHz		F = 10 GHz, PIN = -30 dBm, R_l= 1 M, Video BW = 500 KHz, NF = 3 dB

V_BR @ 100 mA = 0.8 V min. (Packaged)
Model	CT		γ	RV		TSS	CP	LP	Frequency	Package
Model	TYP pF	MAX pF	TYP mV / mW	TYP ?	MAX ?	TYP dBm	TYP pF	TYP nH	MAX GHz	Package
MSS20,140-0402	0.12	0.15	5,000	1,500	2,000	-58	0.05	0.25	26	402
MSS20,141-0402	0.12	0.15	8,000	4,000	6,000	-59	0.05	0.25	26	402
MSS20,142-0402	0.15	0.18	5,000	1,500	2,000	-58	0.05	0.25	20	402
MSS20,143-0402	0.15	0.18	8,000	4,000	6,000	-59	0.05	0.25	20	402
MSS20,145-0402	0.18	0.2	5,000	1,500	2,000	-58	0.05	0.25	18	402
MSS20,146-0402	0.18	0.2	8,000	4,000	6,000	-59	0.05	0.25	18	402
MSS20,046-H27	0.2	0.25	5,000	1,500	2,000	-58	0.12	0.4	18	H27
MSS20,046-E25	0.15	0.2	5,000	1,500	2,000	-58	0.07	0.4	18	E25
MSS20,046-T86	0.26	0.31	5,000	1,500	2,000	-58	0.18	1	12	T86p
MSS20,046-0805-2	0.14	0.2	5,000	1,500	2,000	-58	0.06	0.4	20	0805-2
MSS20,047-H27	0.2	0.25	8,000	4,000	6,000	-59	0.12	0.4	18	H27
MSS20,047-E25	0.15	0.2	8,000	4,000	6,000	-59	0.07	0.4	18	E25
MSS20,047-T86	0.26	0.31	8,000	4,000	6,000	-59	0.18	1	12	T86p
MSS20,047-0805-2	0.14	0.2	8,000	4,000	6,000	-59	0.06	0.4	20	0805-2
MSS20,050-H27	0.24	0.3	5,000	1,500	2,000	-58	0.12	0.4	12	H27
MSS20,050-E25	0.2	0.25	5,000	1,500	2,000	-58	0.07	0.4	12	E25
MSS20,050-T86	0.3	0.36	5,000	1,500	2,000	-58	0.18	1	12	T86p
MSS20,050-0805-2	0.18	0.25	5,000	1,500	2,000	-58	0.06	0.4	18	0805-2
MSS20,051-H27	0.24	0.3	8,000	4,000	6,000	-59	0.12	0.4	12	H27
MSS20,051-E25	0.2	0.25	8,000	4,000	6,000	-59	0.07	0.4	12	E25
MSS20,051-T86	0.3	0.36	8,000	4,000	6,000	-59	0.18	1	12	T86p
MSS20,051-0805-2	0.18	0.25	8,000	4,000	6,000	-59	0.06	0.4	18	0805-2
MSS20,054-H27	0.3	0.35	5,000	1,500	2,000	-58	0.12	0.4	8	H27
MSS20,054-E25	0.25	0.3	5,000	1,500	2,000	-58	0.07	0.4	8	E25
MSS20,054-T86	0.36	0.41	5,000	1,500	2,000	-58	0.18	1	8	T86p
MSS20,054-0805-2	0.24	0.3	5,000	1,500	2,000	-58	0.06	0.4	12	0805-2
MSS20,055-H27	0.3	0.35	8,000	4,000	6,000	-59	0.12	0.4	8	H27
MSS20,055-E25	0.25	0.3	8,000	4,000	6,000	-59	0.07	0.4	8	E25
MSS20,055-T86	0.36	0.41	8,000	4,000	6,000	-59	0.18	1	8	T86p
MSS20,055-0805-2	0.24	0.3	8,000	4,000	6,000	-59	0.06	0.4	12	0805-2
Test Conditions	V_R = 0.5 V F = 1 MHz		F = 10 GHz, PIN = -30 dBm, R_L = 1 M? Video BW = 500 KHz NF = 3 dB

Maximum Ratings
Parameters	Rating
Reverse Voltage	Rated V_br
Forward Current	35 mA
Operation Temperature	-65° C to + 150° C
Storage Temperature	-65° C to + 150° C
CW Power Dissipation	100 mW, derated linearly to zero at Ta= +150° C
Soldering Temperature (Packaged)	+230° C for 5 sec.
Absolute Maximum Power Rating	150 mW per junction

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Silicon Schottky P-Type Diodes: Zero Bias

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